Semiconductor package device and method of manufacturing the same

ABSTRACT

In one or more embodiments, a semiconductor package includes a redistribution layer, a conductive pad, a dielectric layer, a silicon layer, and a conductive contact. The redistribution layer includes a first surface and a second surface opposite to the first surface. The conductive pad is on the first surface of the redistribution layer. The dielectric layer is disposed on the first surface of the redistribution layer to cover a first portion of the conductive pad and to expose a second portion of the conductive pad. The silicon layer is disposed on the dielectric layer, the silicon layer having a recess to expose the second portion of the conductive pad. The conductive contact is disposed over the silicon layer and extends into the recess of the silicon layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of and priority to U.S. Provisional Patent Application No. 62/326,678, filed Apr. 22, 2016, the contents of which are incorporated herein by reference in its entirety. This application is a continuation-in-part of, and claims the benefit of and priority to, U.S. patent application Ser. No. 15/404,093, filed Jan. 11, 2017, which claims the benefit of and priority to U.S. Provisional Patent Application No. 62/277,776, filed Jan. 12, 2016 and U.S. Provisional Patent Application No. 62/279,263, filed Jan. 15, 2016, the contents of which are incorporated herein by reference in its entirety.

BACKGROUND

1. Technical Field

The present disclosure relates generally to a semiconductor package device and a method of manufacturing the same. More particularly, the present disclosure relates to a semiconductor package device including a stacking structure and a method of manufacturing the same.

2. Description of the Related Art

In comparable three-dimensional semiconductor packages, one or more semiconductor devices (e.g., a processing unit or memory) may be attached to a substrate (e.g., ball grid array (BGA) substrate) by way of an interposer, where through-silicon vias (TSVs) in the interposer provide electrical connection between the semiconductor devices and the substrate. However, the use of the TSV interposer would increase a total thickness or height of the semiconductor package.

SUMMARY

In one or more embodiments, an interposer includes a redistribution layer, a conductive pad, and a dielectric layer. The redistribution layer has a first surface and a second surface opposite to the first surface. The conductive pad is on the first surface of the redistribution layer, the conductive pad having a first portion and a second portion. The dielectric layer is on the first surface of the redistribution layer to cover the first portion of the conductive pad and to expose the second portion of the conductive pad, wherein a surface of the second portion of the conductive pad is substantially coplanar with a surface of the dielectric layer.

In one or more embodiments, a semiconductor package includes a redistribution layer, a conductive pad, a dielectric layer, a silicon layer, and a conductive contact. The redistribution layer includes a first surface and a second surface opposite to the first surface. The conductive pad is on the first surface of the redistribution layer. The dielectric layer is disposed on the first surface of the redistribution layer to cover a first portion of the conductive pad and to expose a second portion of the conductive pad. The silicon layer is disposed on the dielectric layer, the silicon layer having a recess to expose the second portion of the conductive pad. The conductive contact is disposed over the silicon layer and extends into the recess of the silicon layer.

In one or more embodiments, a method of manufacturing a semiconductor package is provided. The method includes providing a silicon carrier. The method further includes disposing a dielectric layer on the silicon carrier, the dielectric layer including a conductive pad. The method further includes disposing a redistribution layer on the dielectric layer to electrically connect to the conductive pad. The method further includes connecting a die to the redistribution layer. The method further includes removing a portion of the silicon carrier and the dielectric layer to expose the conductive pad. The method further includes disposing a conductive contact to contact the conductive pad.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a cross-sectional view of a semiconductor package in accordance with some embodiments of the present disclosure;

FIG. 1B illustrates an enlarged view of a portion of the semiconductor package shown in FIG. 1A in accordance with some embodiments of the present disclosure;

FIG. 1C illustrates an enlarged view of a portion of the semiconductor package shown in FIG. 1A in accordance with some embodiments of the present disclosure;

FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2D and FIG. 2E illustrate a method of manufacturing a semiconductor package in accordance with some embodiments of the present disclosure; and

FIG. 3A, FIG. 3B and FIG. 3C illustrate a method of manufacturing a semiconductor package in accordance with some embodiments of the present disclosure.

Common reference numerals are used throughout the drawings and the detailed description to indicate the same or similar elements. The present disclosure will be more apparent from the following detailed description taken in conjunction with the accompanying drawings.

DETAILED DESCRIPTION

FIG. 1A illustrates a cross-sectional view of a semiconductor package 100 in accordance with some embodiments of the present disclosure. The semiconductor package 100 includes a semiconductor package device 1, an interposer 10 and a substrate 13.

The substrate 13 may be a flexible substrate or a rigid substrate, depending upon the specific application. In some embodiments, the substrate 13 includes a plurality of electrical traces disposed therein. In some embodiments, an external contact layer is also formed or disposed on the substrate 13. In some embodiments, the external contact layer includes a ball grid array (BGA). In other embodiments, the external contact layer includes an array such as, but not limited to, a land grid array (LGA) or an array of pins (PGA). In some embodiments, the external contact layer includes solder balls 13 b, which are used and are composed of lead or are lead free (e.g., including such materials as alloys of gold and tin solder or silver and tin solder).

The semiconductor package device 1 is disposed over the substrate 13. The semiconductor package device 1 includes electronic components 11 a, 11 b and a package body 12. Each of the electronic components 11 a, 11 b includes a plurality of semiconductor devices, such as, but not limited to, transistors, capacitors and resistors interconnected together by a die interconnection structure into functional circuits to thereby form an integrated circuit. As will be understood to those skilled in the art, the device side of the semiconductor die includes an active portion including integrated circuitry and interconnections. The electronic components 11 a, 11 b may be any suitable integrated circuit device including, but not limited to, a microprocessor (e.g., single or multi-core), a memory device, a chipset, a graphics device, or an application specific integrated circuit according to several different embodiments.

The package body 12 is disposed to cover or encapsulate the electronic components 11 a, 11 b. In some embodiments, the package body 12 includes an epoxy resin including fillers, a molding compound (e.g., an epoxy molding compound or other molding compound), a polyimide, a phenolic compound or material, a material including a silicone dispersed therein, or a combination thereof.

The interposer 10 is disposed between the semiconductor package device 1 and the substrate 13 to provide electrical connections therebetween. The electronic components 11 a, 11 b are electrically connected to electrical contacts 10 b 1 (such as micro-pads) on the interposer 10. The interposer 10 is electrically connected to the substrate 13 through electrical contacts 10 b 2 (such as Controlled Collapse Chip Connection (C4) pads). In some embodiments, the electrical contacts 10 b 1, 10 b 2 can be covered or encapsulated by an underfill.

FIG. 1B illustrates an enlarged view of a portion of the semiconductor package 100 encircled by the rectangle A shown in FIG. 1A, in accordance with some embodiments of the present disclosure. The interposer 10 includes a redistribution layer (RDL) 10 r, dielectric layers 10 d and 10 n, a silicon layer 10 s, a passivation layer 10 g and a conductive pad 10 p.

In some embodiments, the RDL 10 r includes stacked interlayer dielectrics (ILD) 10 r 1, 10 r 2 and conductive layers 10 m 1, 10 m 2 (e.g., metal layers, which may be respectively referred to herein as a “first interconnection layer” and a “second interconnection layer”) integrated into the interlayer dielectrics 10 r 1, 10 r 2 in spaced relation to each other (e.g., spaced from each other). The conductive layers 10 m 1, 10 m 2 are respectively encapsulated or covered by the ILDs 10 r 1, 10 r 2. The conductive layers 10 m 1, 10 m 2 are electrically connected through conductive interconnections 10 v 1 (e.g., vias). In some embodiments, the conductive layers 10 r 1, 10 r 2 are formed or disposed by a thermal spraying technique in which melted (or heated) materials are sprayed onto a surface. In some embodiments, the RDL 10 r may include any number of ILDs and conductive layers according to several different embodiments. For example, the RDL 10 r may include N ILDs and conductive layers, where N is an integer. In some embodiments, the ILD 10 r 2 includes openings to expose a portion of the conductive layer 10 m 2. The electrical contacts 10 b 1 are disposed on a surface (e.g., second surface) 102 r of the RDL 10 r and extend into the openings to electrically contact the exposed portions of the conductive layer 10 m 2.

The conductive pad 10 p is disposed on a surface (e.g., first surface) 101 r of the RDL 10 r and is electrically connected to the conductive layer 10 m 1 through conductive interconnections 10 v 2 (e.g., vias). In some embodiments, a height of the conductive interconnections 10 v 2 is less than about 1 micrometer (μm). The conductive pad 10 p includes a first portion 10 p 1 disposed on the surface 101 r of the RDL 10 r and a second portion 10 p 2 contacting the first portion 10 p 1. A width D1 of the first portion 10 p 1 is greater than a width D2 of the second portion 10 p 2.

The dielectric layer 10 d is disposed on the surface 101 r of the RDL 10 r to encapsulate or cover the first portion 10 p 1 of the conductive pad 10 p and a portion of a sidewall of the second portion 10 p 2 of the conductive pad 10 p. In some embodiments, the dielectric layer 10 d may include molding compounds, pre-impregnated composite fibers (e.g., pre-preg), Borophosphosilicate Glass (BPSG), silicon oxide, silicon nitride, silicon oxynitride, Undoped Silicate Glass (USG), any combination thereof, or the like. Examples of molding compounds may include, but are not limited to, an epoxy resin including fillers dispersed therein. Examples of a pre-preg may include, but are not limited to, a multi-layer structure formed by stacking or laminating a number of pre-impregnated materials/sheets.

The dielectric layer 10 n is disposed on the dielectric layer 10 d to encapsulate or cover the remaining portion of sidewall of the second portion 10 p 2 of the conductive pad 10 p that is not covered by the dielectric layer 10 d. In some embodiments, a surface 10 n 1 of the dielectric layer 10 n is substantially coplanar with a surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p. In some embodiments, the dielectric layer 10 n and the dielectric layer 10 d are formed of different materials. For example, the dielectric layer 10 n may be formed of silicon nitride, while the dielectric layer 10 d may be formed of silicon oxide. In other embodiments, the dielectric layer 10 n and the dielectric layer 10 d are formed of the same material.

The silicon layer 10 s is disposed on the surface 10 n 1 of the dielectric layer 10 n. The silicon layer 10 s includes an opening to expose the surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p. In some embodiments, a thickness of the silicon layer 10 s is in a range from about 10 μm to about 30 μm.

The passivation layer 10 g is disposed on the silicon layer 10 s and extends into the opening of the silicon layer 10 s to cover a portion of the surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p. In some embodiments, the passivation layer 10 g includes silicon oxide, silicon nitride, gallium oxide, aluminum oxide, scandium oxide, zirconium oxide, lanthanum oxide or hafnium oxide.

A conductive layer 10 u (e.g., under bump metallurgy (UBM)) is disposed on the passivation layer 10 g and extends into the opening of the silicon layer 10 s to contact the remaining portion of the surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p that is not covered by the passivation layer 10 g. For example, the conductive layer 10 u contacts sidewalls 10 g 1 of the passivation layer 10 g and the surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p.

The electrical contact 10 b 2 (e.g., C4 pad) is disposed on the conductive layer 10 u and extends into a recess defined by the conductive layer 10 u. In some embodiments, the electrical contact 10 b 2 electrically contacts sidewalls 10 u 1 and a bottom surface 10 u 2 of the recess defined by the conductive layer 10 u.

As mentioned above, a comparable TSV interposer would increase the total thickness of the semiconductor device. In accordance with some embodiments, the electrical contact 10 b 2 and the electrical contact 10 b 1 are electrically connected through the conductive layers 10 u, 10 m 1, 10 m 2, the conductive pad 10 p and the conductive interconnections 10 v 1, 10 v 2, so as to provide electrical connections between the semiconductor package device 1 and the substrate 13. Hence, the total thickness of the semiconductor package 100 can be reduced.

FIG. 1C illustrates an enlarged view of a portion of the semiconductor package 100 encircled by the rectangle A shown in FIG. 1A, in accordance with some embodiments of the present disclosure. The interposer 10′ shown in FIG. 1C is similar to the interposer 10 shown in FIG. 1B except that the interposer 10′ lacks the silicon layer 10 s. In some embodiments, the passivation layer 10 g is disposed on the surface 10 n 1 of the dielectric layer 10 n. The passivation layer 10 g includes an opening to expose an entirety or a portion of the surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p.

FIGS. 2A, 2B, 2C, 2D and 2E are cross-sectional views of a semiconductor structure fabricated at various stages, in accordance with some embodiments of the present disclosure. Various figures have been simplified for a better understanding of the aspects of the present disclosure.

Referring to FIG. 2A, a base 20 is provided. The base 20 includes a silicon carbide (SiC) substrate, a sapphire substrate or a silicon substrate. An interconnection structure 21 is then formed or disposed on a surface (e.g., first surface) 201 of the base 20. In some embodiments, the interconnection structure 21 may include the RDL 10 r, the conductive pad 10 p, the dielectric layers 10 d and 10 n, and the electrical contacts 10 b 1 as shown in FIG. 1B.

Referring to FIG. 2B, electronic components 22 a, 22 b are formed or disposed on the interconnection structure 21 and electrically connected to the electrical contacts 10 b 1 of the interconnection structure 21. Each of the electronic components 22 a, 22 b includes a plurality of semiconductor devices, such as, but not limited to, transistors, capacitors and resistors interconnected together by a die interconnection structure into functional circuits to thereby form an integrated circuit. As will be understood to those skilled in the art, the device side of the semiconductor die includes an active portion including integrated circuitry and interconnections. The electronic components 22 a, 22 b may be any suitable integrated circuit device including, but not limited to, a microprocessor (e.g., single or multi-core), a memory device, a chipset, a graphics device, or an application specific integrated circuit according to several different embodiments.

An underfill 22 f is formed or disposed to cover or encapsulate the active side of the electronic components 22 a, 22 b and the electrical contacts 10 b 1 of the interconnection structure 21, and then a reflow process may be carried out. A package body 23 is then formed or disposed to cover or encapsulate the electronic components 22 a, 22 b. In some embodiments, the package body 23 includes an epoxy resin including fillers, a molding compound (e.g., an epoxy molding compound or other molding compound), a polyimide, a phenolic compound or material, a material including a silicone dispersed therein, or a combination thereof.

Referring to FIG. 2C, the semiconductor structure shown in FIG. 2B is inverted, and a portion of the base 20 is removed to decrease a thickness of the base by, for example, applying a grinding process to a surface (e.g., second surface) 202 of the base. In some embodiments, a thickness of the remaining portion of the base 20 is in a range from about 10 μm to about 30 μm. The remaining portion of the base 20 provides a reinforcement for the structure to reduce bending of the structure during the following process flow.

An opening 20 h is formed at one or more predetermined locations of the base 20 to expose a surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p. The opening 20 h can be formed by etching or other suitable processes. In some embodiments, the conductive pad 10 p is completely covered by a dielectric layer. Because the base 20 and the dielectric layer are formed of different materials, two different etching processes may be carried out to respectively remove the base 20 and the dielectric layer, which would increase the manufacturing cost, time and difficulty. In accordance with some embodiments, since the surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p is not covered by the dielectric layer 10 n, the conductive pad 10 p can be exposed by a single etching process performed on the base 20. In other embodiments, the base 20 can be completely removed to expose the surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p.

Referring to FIG. 2D, a conductive layer 20 u (e.g., UBM) is formed or disposed in the opening 20 h to contact the surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p, and then an electrical contact 20 b (e.g., a C4 pad) is formed or disposed on the conductive layer 20 u and extends into the opening 20 h to form a semiconductor package device 2.

Referring to FIG. 2E, the semiconductor structure shown in FIG. 2D is connected to a substrate 24 (e.g., a BGA substrate). An underfill 24 u is formed or disposed to cover or encapsulate the electrical contact 20 b, and then a reflow process may be carried out. A support structure 24 p may be formed or disposed along edges of the substrate 24 to prevent the semiconductor package device 2 from being cracked by another object placed on the semiconductor package device 2. In some embodiments, the processes shown in FIGS. 2A-2E are referred to as a “chip-first process.”

FIGS. 3A, 3B and 3C are cross-sectional views of a semiconductor structure fabricated at various stages, in accordance with some embodiments of the present disclosure. Various figures have been simplified for a better understanding of the aspects of the present disclosure. In some embodiments, the operation shown in FIG. 3A is carried out subsequent to the operation shown in FIG. 2A.

Referring to FIG. 3A, the semiconductor structure shown in FIG. 2A is inverted and the interconnection structure 21 is placed on a carrier 30. In some embodiments, the carrier 30 is a glass carrier. A portion of the base 20 is then removed to decrease a thickness of the base by, for example, applying a grinding process to a surface 202 of the base. In some embodiments, a thickness of the remaining portion of the base 20 is in a range from about 10 μm to about 30 μm. The remaining portion of the base 20 provides a reinforcement for the structure to reduce bending of the structure during the following process flow.

An opening 20 h is formed at a predetermined location of the base 20 to expose a surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p. The opening 20 h can be formed by etching or other suitable processes. As mentioned above, since the surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p is not covered by the dielectric layer 10 n, the conductive pad 10 p can be exposed by a single etching process performed on the base 20. In other embodiments, the base 20 can be completely removed to expose the surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p.

Referring to FIG. 3B, the semiconductor structure shown in FIG. 3A is inverted and the carrier 30 is removed from the interconnection structure 21. The conductive layer 20 u (e.g., UBM) is formed or disposed in the opening 20 h to contact the surface 10 p 21 of the second portion 10 p 2 of the conductive pad 10 p, and then an electrical contact 20 b (e.g., a C4 pad) is formed or disposed on the conductive layer 20 u and extends into the opening 20 h.

Referring to FIG. 3C, the semiconductor structure shown in FIG. 3B is inverted, and electronic components 22 a, 22 b are formed or disposed on the interconnection structure 21 and electrically connected to the electrical contact 10 b 1 of the interconnection structure 21. Each of the electronic components 22 a, 22 b includes a plurality of semiconductor devices, such as, but not limited to, transistors, capacitors and resistors interconnected together by a die interconnection structure into functional circuits to thereby form an integrated circuit. As will be understood to those skilled in the art, the device side of the semiconductor die includes an active portion including integrated circuitry and interconnections. The electronic components 22 a, 22 b may be any suitable integrated circuit device including, but not limited to, a microprocessor (e.g., single or multi-core), a memory device, a chipset, a graphics device, or an application specific integrated circuit according to several different embodiments.

An underfill 22 f is formed or disposed to cover or encapsulate the active side of the electronic components 21 a, 22 b and the electrical contact 10 b 1 of the interconnection structure 21, and then a reflow process may be carried out. A package body 23 is then formed or disposed to cover or encapsulate the electronic components 22 a, 22 b to form a semiconductor package device 2 as shown in FIG. 3C. In some embodiments, the package body 23 includes an epoxy resin including fillers, a molding compound (e.g., an epoxy molding compound or other molding compound), a polyimide, a phenolic compound or material, a material including a silicone dispersed therein, or a combination thereof. In some embodiments, the processes shown in FIGS. 3A-3C are referred to as a “chip-last process.”

As used herein, the terms “approximately,” “substantially,” “substantial” and “about” are used to describe and account for small variations. When used in conjunction with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation. For example, when used in conjunction with a numerical value, the terms can refer to a range of variation less than or equal to ±10% of that numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, two numerical values can be deemed to be “substantially” the same if a difference between the values is less than or equal to ±10% of an average of the values, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, “substantially” parallel can refer to a range of angular variation relative to 0° that is less than or equal to ±10°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. For example, “substantially” perpendicular can refer to a range of angular variation relative to 90° that is less than or equal to ±10°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

Two surfaces can be deemed to be coplanar or substantially coplanar if a displacement between the two surfaces is no greater than 5 μm, no greater than 2 μm, no greater than 1 μm, or no greater than 0.5 μm.

As used herein, the terms “conductive,” “electrically conductive” and “electrical conductivity” refer to an ability to transport an electric current. Electrically conductive materials typically indicate those materials that exhibit little or no opposition to the flow of an electric current. One measure of electrical conductivity is Siemens per meter (S/m). Typically, an electrically conductive material is one having a conductivity greater than approximately 10⁴ S/m, such as at least 10⁵ S/m or at least 10⁶ S/m. The electrical conductivity of a material can sometimes vary with temperature. Unless otherwise specified, the electrical conductivity of a material is measured at room temperature.

In the description of some embodiments, a component provided “on” or “over” another component can encompass cases where the former component is directly on (e.g., in physical contact with) the latter component, as well as cases where one or more intervening components are located between the former component and the latter component.

While the present disclosure has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations do not limit the present disclosure. It can be clearly understood by those skilled in the art that various changes may be made, and equivalent components may be substituted within the embodiments without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The illustrations may not necessarily be drawn to scale. There may be distinctions between the artistic renditions in the present disclosure and the actual apparatus, due to variables in manufacturing processes and such. There may be other embodiments of the present disclosure which are not specifically illustrated. The specification and drawings are to be regarded as illustrative rather than restrictive. Modifications may be made to adapt a particular situation, material, composition of matter, method, or process to the objective, spirit and scope of the present disclosure. All such modifications are intended to be within the scope of the claims appended hereto. While the methods disclosed herein have been described with reference to particular operations performed in a particular order, it can be understood that these operations may be combined, sub-divided, or re-ordered to form an equivalent method without departing from the teachings of the present disclosure. Therefore, unless specifically indicated herein, the order and grouping of the operations are not limitations of the present disclosure. 

What is claimed is:
 1. An interposer comprising: a redistribution layer having a first surface and a second surface opposite to the first surface; a conductive pad on the first surface of the redistribution layer, the conductive pad comprising a first portion and a second portion; a dielectric layer on the first surface of the redistribution layer to cover the first portion of the conductive pad and to expose the second portion of the conductive pad, wherein a surface of the second portion of the conductive pad is substantially coplanar with a surface of the dielectric layer; a passivation layer on the surface of the dielectric layer, the passivation layer defining a recess to expose the surface of the second portion of the conductive pad; and a first conductive contact on the passivation layer and extending into the recess of the passivation layer.
 2. The interposer of claim 1, wherein a width of the first portion of the conductive pad is greater than a width of the second portion of the conductive pad.
 3. The interposer of claim 1, wherein: the dielectric layer further comprises an oxide layer on the first surface of the redistribution layer and a nitride layer on the oxide layer, and the surface of the second portion of the conductive pad is substantially coplanar with a surface of the nitride layer.
 4. The interposer of claim 1, wherein the redistribution layer comprises a first interconnection layer, the first interconnection layer comprising a via electrically connected to the conductive pad.
 5. The interposer of claim 4, further comprising a second conductive contact on the second surface of the redistribution layer and electrically connected to the first interconnection layer.
 6. The interposer of claim 1, further comprising a conductive layer on a sidewall of the recess and the surface of the second portion of the conductive pad, wherein the first conductive contact is electrically connected to the conductive pad through the conductive layer.
 7. The interposer of claim 6, wherein the conductive layer is disposed between the passivation layer and the first conductive contact.
 8. The interposer of claim 6, further comprising a silicon layer between the passivation layer and the dielectric layer, wherein the silicon layer is spaced apart from the conductive layer in a direction substantially parallel to the surface of the dielectric layer.
 9. The interposer of claim 5, wherein the redistribution layer further comprises a second interconnection layer, and the second conductive contact is electrically connected to the first interconnection layer through the second interconnection layer.
 10. The interposer of claim 9, further comprising a die disposed over the second surface of the redistribution layer and electrically connected to the second conductive contact.
 11. A semiconductor package comprising: a redistribution layer having a first surface and a second surface opposite to the first surface; a conductive pad on the first surface of the redistribution layer; a dielectric layer on the first surface of the redistribution layer to cover a first portion of the conductive pad and to expose a second portion of the conductive pad; a silicon layer on the dielectric layer, the silicon layer defining a recess to expose the second portion of the conductive pad; a conductive contact disposed over the silicon layer and extending into the recess of the silicon layer; and a passivation layer on the silicon layer and extending into the recess to cover a sidewall of the recess and a part of the second portion of the conductive pad.
 12. The semiconductor package of claim 11, further comprising a conductive layer disposed between the conductive contact and the second portion of the conductive pad and between the conductive contact and the passivation layer.
 13. The semiconductor package of claim 11, wherein a width of the first portion of the conductive pad is greater than a width of the second portion of the conductive pad.
 14. The semiconductor package of claim 11, wherein a surface of the second portion of the conductive pad is substantially coplanar with a surface of the dielectric layer.
 15. The semiconductor package of claim 14, wherein: the dielectric layer further comprises an oxide layer on the first surface of the redistribution layer and a nitride layer on the oxide layer, and the surface of the second portion of the conductive pad is substantially coplanar with a surface of the nitride layer.
 16. The semiconductor package of claim 11, wherein the redistribution layer comprises a first interconnection layer, the first interconnection layer comprising a via electrically connected to the conductive pad.
 17. The semiconductor package of claim 12, wherein the passivation layer extends into a space between the silicon layer and the conductive layer. 